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 MC74HC86A Quad 2-Input Exclusive OR Gate
High-Performance Silicon-Gate CMOS
The MC74HC86A is identical in pinout to the LS86. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.
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14 PDIP-14 N SUFFIX CASE 646 MC74HC86AN AWLYYWW 1 14 SOIC-14 D SUFFIX CASE 751A 1 14 3 Y1 TSSOP-14 DT SUFFIX CASE 948G Y= AB 9 10 12 13 = AB + AB 8 Y3 PIN 14 = VCC PIN 7 = GND 11 Y4 A HC 86A ALYW HC86A AWLYWW
* * * * * * *
Output Drive Capability: 10 LSTTL Loads Outputs Directly Interface to CMOS, NMOS, and TTL Operating Voltage Range: 2 to 6 V Low Input Current: 1 A High Noise Immunity Characteristic of CMOS Devices In Compliance with the Requirements Defined by JEDEC Standard No. 7A Chip Complexity: 56 FETs or 14 Equivalent Gates
LOGIC DIAGRAM
A1 B1 A2 B2 A3 B3 A4 B4 1 2 4 5
6
Y2
1 A = Assembly Location WL or L = Wafer Lot YY or Y = Year WW or W = Work Week
FUNCTION TABLE
Inputs B L H L H L L H H Output Y L H H L
PIN ASSIGNMENT
A1 B1 Y1 A2 B2 Y2 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC B4 A4 Y4 B3 A3 Y3
ORDERING INFORMATION
Device MC74HC86AN MC74HC86AD MC74HC86ADR2 MC74HC86ADT MC74HC86ADTR2 Package PDIP-14 SOIC-14 SOIC-14 TSSOP-14 TSSOP-14 Shipping 2000 / Box 55 / Rail 2500 / Reel 96 / Rail 2500 / Reel
(c) Semiconductor Components Industries, LLC, 2000
1
March, 2000 - Rev. 2
Publication Order Number: MC74HC86A/D
MC74HC86A
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I II I I I II II II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIII I II I I I II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I III I I I I I II I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II I I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIII I II I I I II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIII III I II I I IIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII II I IIII I II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I
IIIIIIIIIIIIIIIIIIII II I IIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII II I II I I III II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I III II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS*
SymbolIIIIIIIIIIIIII Parameter VCC Vin DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) Value Unit - 0.5 to + 7.0III V V V - 0.5 to VCC + 0.5 - 0.5 to VCC + 0.5 20 25 50 750 500 450 Vout Iin DC Output Voltage (Referenced to GND) DC Input Current, per Pin mA mA mA Iout DC Output Current, per Pin ICC PD DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP SOIC Package TSSOP Package mW Tstg TL Storage Temperature - 65 to + 150 260
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
v
v
_C _C
Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP, SOIC or TSSOP Package)
*Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. Derating -- Plastic DIP: - 10 mW/_C from 65_ to 125_C SOIC Package: - 7 mW/_C from 65_ to 125_C TSSOP Package: - 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol VCC Parameter Min 2.0 0 Max 6.0 Unit V V
DC Supply Voltage (Referenced to GND)
Vin, Vout TA
DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1)
VCC
- 55 0 0 0
+ 125 1000 500 400
_C
ns
tr, tf
VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol VIH
Parameter
Test Conditions
VCC V 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 4.5 6.0 3.0 4.5 6.0
- 55 to 25_C 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9
v 85_C v 125_C
1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9 1.5 2.1 3.15 4.2 0.5 0.9 1.35 1.8 1.9 4.4 5.9
Unit V
Minimum High-Level Input Voltage
Vout = 0.1 V or VCC - 0.1 V |Iout| 20 A
v v
VIL
Maximum Low-Level Input Voltage
Vout = 0.1 V or VCC - 0.1 V |Iout| 20 A
V
VOH
Minimum High-Level Output Voltage
Vin = VIH or VIL |Iout| 20 A
v
V
Vin = VIH or VIL |Iout| |Iout| |Iout|
v 2.4 mA v 4.0 mA v 5.2 mA
2.48 3.98 5.48
2.34 3.84 5.34
2.20 3.70 5.20
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MC74HC86A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I III I I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I II I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II I I I II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII II II I I I I III I I I I I II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I III I I I I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I
Guaranteed Limit Symbol VOL Parameter Test Conditions VCC V 2.0 4.5 6.0 3.0 4.5 6.0 6.0 6.0 - 55 to 25_C 0.1 0.1 0.1
v 85_C v 125_C
0.1 0.1 0.1 0.1 0.1 0.1 0.33 0.33 0.33 0.40 0.40 0.40
Unit V
Maximum Low-Level Output Voltage
Vin = VIH or VIL |Iout| 20 A
v
Vin = VIH or VIL |Iout| |Iout| |Iout| Vin = VCC or GND Vin = VCC or GND Iout = 0 A
v 2.4 mA v 4.0 mA v 5.2 mA
0.26 0.26 0.26
Iin
Maximum Input Leakage Current
0.1 1.0
1.0 10
1.0 40
A A
ICC
Maximum Quiescent Supply Current (per Package)
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D).
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input t, = tf = 6 ns)
Guaranteed Limit
Symbol tPLH, tPHL
Parameter
VCC V 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 --
- 55 to 25_C 100 80 20 17 75 30 15 13 10
v 85_C v 125_C
125 90 25 21 95 40 19 16 10 150 110 31 26 110 55 22 19 10
Unit ns
Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2)
tTLH, tTHL
Maximum Output Transition Time, Any Output (Figures 1 and 2)
ns
Cin
Maximum Input Capacitance
pF
NOTES: 1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D). 2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D). Typical @ 25C, VCC = 5.0 V CPD Power Dissipation Capacitance (Per Gate)* 33 pF * Used to determine the no-load dynamic power consumption: P D = C PD V CC 2 f + I CC V CC . For load considerations, see Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D).
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MC74HC86A
tr 90% 50% 10% tPHL 90% OUTPUT Y 50% 10% tTLH tTHL *Includes all probe and jig capacitance tf VCC TEST POINT GND OUTPUT tPLH DEVICE UNDER TEST CL*
INPUT A OR B
Figure 1. Switching Waveforms
Figure 2. Test Circuit
EXPANDED LOGIC DIAGRAM (1/4 of Device)
A
Y
B
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MC74HC86A
PACKAGE DIMENSIONS
PDIP-14 N SUFFIX CASE 646-06 ISSUE L
14 8
B
1 7
NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01
A F C N H G D
SEATING PLANE
L
J K M
SOIC-14 D SUFFIX CASE 751A-03 ISSUE F
-A-
14 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
-B-
1 7
P 7 PL 0.25 (0.010)
M
B
M
G C
R X 45 _
F
-T-
SEATING PLANE
D 14 PL 0.25 (0.010)
K
M
M
S
J
TB
A
S
DIM A B C D F G J K M P R
MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50
INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019
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MC74HC86A
PACKAGE DIMENSIONS
TSSOP-14 DT SUFFIX CASE 948G-01 ISSUE O
14X K REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 --- 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 --- 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_
0.10 (0.004) 0.15 (0.006) T U
S
M
TU
S
V
S
N
2X
L/2
14
8
0.25 (0.010) M
L
PIN 1 IDENT. 1 7
B -U-
N F DETAIL E K K1 J J1
0.15 (0.006) T U
S
SECTION N-N -W-
C 0.10 (0.004) -T- SEATING
PLANE
D
G
H
DETAIL E
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EE CC EE CC
A -V-
MC74HC86A
Notes
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MC74HC86A
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MC74HC86A/D


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